Integrated Assemblies Comprising Vertically-Stacked Decks

ABSTRACT

Some embodiments include an integrated assembly having a base supporting first circuitry and first conductive lines. The first conductive lines extend along a first direction and are associated with the first circuitry. A deck is over the base and supports an array of memory cells and second conductive lines which are associated with the array of memory cells. The second conductive lines extend along a second direction which is substantially orthogonal to the first direction. Vertical interconnects extend from the deck to the base and couple the first conductive lines to the second conductive lines. Each of the vertical interconnects couples one of the first conductive lines to one of the second conductive lines. Each of the second conductive lines is coupled with only one of the first conductive lines.

TECHNICAL FIELD

Integrated assemblies comprising vertically-stacked decks.

BACKGROUND

Memory is utilized in modern computing architectures for storing data.One type of memory is Dynamic Random-Access Memory (DRAM). DRAM mayprovide advantages of structural simplicity, low cost and high speed incomparison to alternative types of memory.

DRAM may utilize memory cells which have one capacitor in combinationwith one transistor (so-called 1T-1C memory cells), with the capacitorbeing coupled with a source/drain region of the transistor. An example1T-1C memory cell 2 is shown in FIG. 1, with the transistor labeled Tand the capacitor labeled C. The capacitor has one node coupled with asource/drain region of the transistor, and has another node coupled witha common plate, CP. The common plate may be coupled with any suitablevoltage, such as a voltage within a range of from greater than or equalto ground to less than or equal to VCC (i.e., ground≤CP≤VCC). In someapplications, the common plate is at a voltage of about one-half VCC(i.e., about VCC/2). The transistor has a gate coupled to a wordline WL(i.e., access line), and has a source/drain region coupled to a bitlineBL (i.e., digit-line or sense line). In operation, an electrical fieldgenerated by voltage along the wordline may gatedly couple the bitlineto the capacitor during read/write operations.

Another prior art 1T-1C memory cell configuration is shown in FIG. 2.The configuration of FIG. 2 shows two memory cells 2 a and 2 b; withmemory cell 2 a comprising a transistor T1 and a capacitor C1, and withthe memory cell 2 b comprising a transistor T2 and a capacitor C2.Wordlines WL0 and WL1 are electrically coupled with the gates oftransistors T1 and T2, respectively. A connection to a bitline BL isshared by the memory cells 2 a and 2 b.

The memory cells described above may be incorporated into memory arrays,and in some applications the memory arrays may have open bitlinearrangements. An example integrated assembly 9 having open bitlinearchitecture is shown in FIG. 3. The assembly 9 includes two laterallyadjacent memory arrays (“Array 1” and “Array 2”), with each of thearrays including memory cells of the type described in FIG. 2 (notlabeled in FIG. 3 in order to simplify the drawing). Wordlines WL0-WL7extend across the arrays, and are coupled with wordline drivers.Digit-lines D0-D8 are associated with the first array (Array 1), anddigit-lines D0*-D8* are associated with the second array (Array 2).Sense amplifiers SA0-SA8 are provided between the first and secondarrays. Digit-lines at the same height are paired within one another andcompared through a sense amplifier (e.g., digit-lines D0 and D0* arepaired with one another and compared with the sense amplifier SA0). In aread operation, one of the paired digit-lines may serve as a referencein determining electrical properties (e.g., voltage) of the other of thepaired digit-lines.

A continuing goal of integrated circuit fabrication is to increaseintegration. There is interest in stacking decks (tiers) of integratedcircuitry to achieve high integration. However, it is proving difficultto couple circuitry from the upper decks with the circuitry of the lowerdecks, particularly since there is generally at least some risk ofmisalignment of the decks. It would be desirable to developthree-dimensional arrangements enabling coupling of the circuitry fromthe upper decks to that of the lower decks, and enabling the ability tocorrect for possible misalignment.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a schematic diagram of a prior art memory cell having 1transistor and 1 capacitor.

FIG. 2 is a schematic diagram of a pair of prior art memory cells whicheach have 1 transistor and 1 capacitor, and which share a bitlineconnection.

FIG. 3 is a schematic diagram of a prior art integrated assembly havingopen bitline architecture.

FIGS. 4-8 are schematic diagrams of example integrated assemblies havingmultiple decks which are vertically displaced relative to one another.

FIG. 9 is a diagrammatic plan view of an example integrated assemblyhaving components from an upper deck (shown in solid line view)overlapping components of a lower deck (shown in dashed-line view).

FIG. 10 is a diagrammatic plan view of an example integrated assemblyhaving components from an upper deck (shown in solid line view)overlapping components of a lower deck (shown in dashed-line view).

FIG. 11 is a diagrammatic cross-sectional side view of a region anexample integrated assembly showing an example connection between anupper deck and a lower deck.

DETAILED DESCRIPTION OF THE ILLUSTRATED EMBODIMENTS

Some embodiments include integrated assemblies which have conductiveextensions from wordlines and/or digit-lines of one or more memorydecks, with such conductive extensions crossing conductive lines ofanother deck. The crossing of the extensions from a memory deck with theconductive lines of another deck may enable interconnects to be formedfrom the circuitry of the memory deck to the circuitry of the otherdeck, even if there is misalignment between the memory deck and theother deck. In some embodiments, the other deck may be a base deck underthe memory deck, and may comprise wordline-driver-circuitry and/orsense-amplifier-circuitry. Example embodiments are described withreference to FIGS. 4-11.

Referring to FIG. 4, an integrated assembly 10 includes a base 12 and adeck 14 over the base. The base 12 and the deck 14 may be considered tobe examples of levels that are stacked one atop the other. The levelsmay be within different semiconductor dies, or may be within the samesemiconductor die.

The deck 14 includes a memory array 16. The memory array includes memorycells 18 which are diagrammatically illustrated as boxes within thememory array. Only some of the memory cells are shown, but in practicethe memory cells may extend entirely across the memory array. The memoryarray 16 may comprise any suitable number of the memory cells 18, and insome embodiments may comprise hundreds, thousands, millions, etc., ofthe memory cells. The memory cells may be DRAM cells, and in someembodiments may be configured in arrangements of the types describedabove with reference to prior art FIGS. 1-3. In some embodiments, thearray 16 may be referred to as an array of memory cells. In someembodiments, the deck 14 may be referred to as a memory deck.

The base 12 may comprise semiconductor material; and may, for example,comprise, consist essentially of, or consist of monocrystalline silicon.The base 12 may be referred to as a semiconductor substrate. The term“semiconductor substrate” means any construction comprisingsemiconductive material, including, but not limited to, bulksemiconductive materials such as a semiconductive wafer (either alone orin assemblies comprising other materials), and semiconductive materiallayers (either alone or in assemblies comprising other materials). Theterm “substrate” refers to any supporting structure, including, but notlimited to, the semiconductor substrates described above. In someapplications, the base 12 may correspond to a semiconductor substratecontaining one or more materials associated with integrated circuitfabrication. Such materials may include, for example, one or more ofrefractory metal materials, barrier materials, diffusion materials,insulator materials, etc. It is noted that the deck 14 may also comprisesemiconductor material, and may also be referred to as a semiconductorsubstrate.

The structure 12 is referred to as a “base” because it is below thememory deck 14. The structure 12 may be alternatively referred to as adeck. The structure 12 may be a bottommost deck of an assembly (asshown), or there may be additional decks beneath the illustratedstructure 12. Also, there may be additional decks over the memory deck14.

In the shown embodiment, the base 12 comprises circuitry 20 whichincludes driver circuitry (e.g., wordline-driver-circuitry) andsense-amplifier-circuitry. The circuitry 20 may be referred to as “firstcircuitry” to distinguish it from other circuitry, such as, for example,the memory-array-circuitry along deck 14.

Embodiments described herein pertain to architectures which enablewiring associated with an upper deck (e.g., deck 14) to be coupled towiring associated with a lower deck (e.g., base 12), even if the upperand lower decks are misaligned relative to one another. In the shownembodiment, the memory deck 14 has digit-lines 22 (only some of whichare shown) and wordlines 24 (only some of which are shown); with thedigit-lines and wordlines being associated with the memory array 16. Forinstance, the digit-lines and wordlines may have relationships to thememory array analogous to those described above with reference to FIG.3. The digit-lines 22 and wordlines 24 pass through the memory array 16,but the actual passage of such lines through the memory array is notshown in FIG. 4 in order to simplify the drawing. In some embodiments,the portions of the digit lines 22 outside of the memory array 16 may beconsidered to be digit-line-extensions 26; with such digit lineextensions being coupled with the regions of the digit-lines passingthrough the memory array. Similarly, the portions of the wordlines 24outside of the memory array may be considered to be wordline-extensions28 which are coupled with the regions of the wordlines passing throughthe memory array.

An x/y axis is provided adjacent the assembly 10. Thewordline-extensions 28 extend outwardly from the memory array along afirst direction corresponding to the x-axis direction, and thedigit-line-extensions 26 extend outwardly from the memory array along asecond direction corresponding to the y-axis direction.

The base 12 supports a first series of conductive lines 30 and a secondseries of conductive lines 32. The conductive lines 30 extend along thefirst direction (i.e., the y-axis direction) and are configured forbeing coupled with the digit-line-extensions 26; and the conductivelines 32 extend along the second direction (i.e., the y-axis direction)and are configured for being coupled with the wordline-extensions 28.Notably, the conductive lines 30 cross the digit-line-extensions 26 (andin the shown embodiment are orthogonal to the digit-line-extensions 26),and accordingly connection can be made between the digit-line-extensions26 and the conductive lines 30 even if the memory deck 14 is misalignedrelative to the base 12. Similarly, the conductive lines 32 cross thewordline-extensions 28 (and in the shown embodiment are orthogonal tothe wordline-extensions 28), and accordingly connection can be madebetween the wordline-extensions 28 and the conductive lines 32 even ifthe memory deck 14 is misaligned relative to the base 12.

The conductive lines 30 are coupled with the sense amplifiers within thecircuitry 20, as is diagrammatically illustrated with dashed lines 31extending from the conductive lines 32 the circuitry 20. In someembodiments, the conductive lines 30 may be referred to as firstconductive lines which are associated with the base 12, and which extendto the sense-amplifier-circuitry of circuitry 20.

The conductive lines 32 are coupled with the wordline drivers within thecircuitry 20, as is diagrammatically illustrated with the dashed lines33 extending from the conductive lines 32 to the circuitry 20. In someembodiments, the conductive lines 32 may be referred to as secondconductive lines which are associated with the base 12, and which extendto the wordline-driver-circuitry of circuitry 20.

The circuitry 20 of base 12 may be provided in any desired region of thebase; and similarly the memory array 16 of deck 14 may be provided inany suitable region of the deck. In the illustrated embodiment, thecircuitry 20 is provided directly beneath the memory array 16.

The digit-line-extensions 26 may be considered to be within a firstconnection-bank-region 34 associated with the deck 14, and the wordlines28 may be considered to be within a second connection-bank-region 36associated with the deck 14. The conductive lines 30 may be consideredto be within a third connection-bank-region 38 associated with the base12, and the conductive lines 32 to be considered to be within a fourthconnection-bank-region 40 associated with the base 12. In the shownembodiment, the first connection-bank-region 34 is directly above thethird connection-bank-region 38 so that the digit-line-extensions 26 maybe coupled to the conductive lines 30, and the secondconnection-bank-region 36 is directly above the fourthconnection-bank-region 40 so that the wordline-extensions 28 may becoupled with the conductive lines 32.

In some embodiments, the conductive lines 30 within theconnection-bank-region 38 may be referred to as first conductive lines,and the conductive lines 26 within the connection-bank-region 34 may bereferred to as second conductive lines. The first conductive linesextend along a first direction (i.e., the x-axis direction), and thesecond conductive lines extend along a second direction (i.e., they-axis direction) which is substantially orthogonal to the firstdirection (with the term “substantially orthogonal” meaning orthogonalto within reasonable tolerances of fabrication and measurement).Similarly, in some embodiments the conductive lines 32 within theconnection-bank-region 40 may be referred to as first conductive lines,and the conductive lines 28 within the connection-bank-region 36 may bereferred to as second conductive lines; with the second conductive linesextending substantially orthogonally relative to the first conductivelines.

The digit-line-extensions 26 are shown to be coupled with the conductivelines 30 through vertical interconnects 42; and the wordline-extensions28 are shown to be coupled with the conductive lines 32 through verticalinterconnects 44. In the illustrated embodiment, each of the verticalinterconnects 42 couples one of the digit-line-extensions 26 to one ofthe conductive lines 30, and each of the digit-line-extensions iscoupled with only one of the conductive lines 30. Accordingly, eachconductive line 30 is uniquely coupled with one of the digit-lines 22.Similarly, each of the vertical interconnects 44 couples one of thewordline-extensions 28 with only one of the conductive lines 32, andeach of the wordline-extensions is coupled with only one of theconductive lines 32. Accordingly, each conductive line 32 is uniquelycoupled with only one of the wordlines 24.

In some embodiments, the digit-line-extensions 26 may be on a same pitchas the digit-lines 22, and in the shown embodiment are on a pitch P₁.The conductive lines 30 may be on the same pitch as thedigit-line-extensions 26, and in the shown embodiment are shown to be onthe pitch P₁. The wordline-extensions 28 may be on a same pitch as thewordlines, and the wordlines may be on a same pitch as the digit-lines22. In the shown embodiment, the wordline-extensions 28 are shown to beon the pitch P₁. The conductive lines 32 may be on the same pitch as thewordline-extensions 28, and are shown to be on the pitch P₁. The pitchP₁ may be the so-called “array pitch”, and specifically may be the pitchof the wordlines and/or digit-lines within the memory array.

FIG. 4 diagrammatically illustrates alignment marks 19 and 21 at cornersof the decks 12 and 14, respectively. The alignment mark 19 has a firstpattern to establish alignment of the digit-line-extensions 26 along afirst axis (with such first pattern being designated as X), and has asecond pattern to establish alignment of the wordline-extensions 28along the first axis (with such second pattern being designated as X′).The alignment mark 21 has a third pattern to establish alignment of theconductive lines 30 along a second axis orthogonal to the first axis(with such second pattern being designated as Y), and has a fourthpattern to establish alignment of the conductive lines 32 along thesecond axis (with such third pattern being designated as Y′). Someembodiments (discussed below with reference to, for example, FIG. 7) maysimplify the alignment of the vertically-stacked decks.

Referring to FIG. 5, an integrated assembly 10 a includes the base 12,the deck 14 over the base, and another deck 50 over the deck 14. Thedecks 14 and 50 may be referred to as Memory Deck-1 and Memory Deck-2,respectively.

The memory array 16 is labeled as Array-1. The second deck 50 includes asecond memory array 52 which is labeled as Array-2. The array 52includes memory cells 54 which are diagrammatically illustrated as boxeswithin the memory array. Only some of the memory cells are shown, but inpractice the memory cells may extend entirely across the memory array.The memory array 52 may comprise any suitable number of memory cells,and in some embodiments may comprise hundreds, thousands, millions,etc., of the memory cells. The memory cells may be DRAM cells, and insome embodiments may be configured in arrangements of the typesdescribed above with reference to prior art FIGS. 1-3. In someembodiments, the array 52 may be referred to as a second array of memorycells to distinguish it from the first array of memory cellscorresponding to array 16.

The Array-1 of deck 14 and the Array-2 of deck 50 may correspond to theArrays 1 and 2 described above with reference to FIG. 3. Accordingly,the Array-1 of deck 14 is shown to comprise the digit-lines D0 and D1,and the wordlines WL0 and WL1; while the Array-2 of deck 50 is shown tocomprise the digit-lines D0* and D1*, and the wordlines WL4 and WL5. Theillustrated digit-lines and wordlines are representative of largenumbers of digit-lines and wordlines that may be associated with therespective memory arrays. For instance, each memory array may comprisehundreds, thousands, millions, etc., of digit-lines and wordlines.

The digit-lines of deck 14 are coupled with the digit-line-extensions 26within the connection-bank 34, and the wordlines of deck 14 are coupledwith the wordline-extensions 28 within the connection-bank 36.Analogously, the digit-lines of deck 50 are coupled withdigit-line-extensions 56 within a connection-bank 58, and the wordlinesof deck 50 are coupled with wordline-extensions 60 within aconnection-bank 62. In some embodiments, the digit-lines of the firstarray 16 (e.g., D0 and D1) may be referred to as first digit-lines, thedigit-lines of the second array 52 (e.g., D0* and D1*) may be referredto as second digit-lines, the wordlines of the first array 16 (e.g., WL0and WL1) may be referred to as first wordlines, and the wordlines of thesecond array 52 (e.g., WL4 and WL5) may be referred to as secondwordlines. In such embodiments, the digit-line-extensions 26 associatedwith the first array 16 may be referred to as firstdigit-line-extensions, and the digit-line-extensions 56 associated withthe second array 52 may be referred to as second digit-line-extensions.Similarly, the wordline-extensions 28 associated with the first array 16may be referred to as first wordline-extensions, and thewordline-extensions 60 associated with the second array may be referredto as second wordline-extensions.

In the illustrated embodiment, the digit-line-extensions 26 of deck 14are orthogonal to the wordline-extensions 28 of deck 14; and thedigit-line-extensions 56 of deck 50 are orthogonal to thewordline-extensions 60 of deck 50.

In the illustrated embodiment, the digit-line-extensions 26 are on oneside of the memory array 16, and the digit-line-extensions 56 are on anopposing side of the memory array 52 as compared to the relationship ofthe digit-line-extensions 26 to the memory array 16. Also, thewordline-extensions 28 are on one side of the memory array 16, and thewordline-extensions 60 are on an opposing side of the memory array 52 ascompared to the relationship of the wordline-extensions 28 to the memoryarray 16.

The base 12 comprises the circuitry 20 which includeswordline-driver-circuitry and sense-amplifier-circuitry. The base alsoincludes the conductive lines 30 within the connection-bank 38 andcoupled to the digit-line-extensions 26 through the verticalinterconnects 42; and includes the conductive lines 32 within theconnection-bank 40 and coupled to the wordline-extensions 28 through thevertical interconnects 44. Additionally, the base 12 includes conductivelines 64 within a connection-bank 66; with such conductive lines beingcoupled to the wordline-extensions 60 through vertical interconnects 68.The conductive lines 64 are coupled with wordline-driver-circuitry ofthe circuitry 20, with such coupling being diagrammatically illustratedutilizing dashed lines 65. The base 12 also includes conductive lines 70within a connection-bank 72; with such conductive lines being coupled tothe digit-line-extensions 56 through vertical interconnects 74. Theconductive lines 70 are coupled with sense-amplifier-circuitry of thecircuitry 20, with such coupling being diagrammatically illustratedutilizing dashed lines 67.

In some embodiments, the conductive lines 30 of the base 12 may bereferred to as first conductive lines associated with the base, and theconductive lines 70 may be referred to as second conductive lines whichare on an opposing side of the circuitry 20 relative to the firstconductive lines 30. The first and second conductive lines 30 and 70both extend along the direction of the x-axis (which may be referred toas a first direction). The assembly 10 a may be considered to comprisesome digit-lines (e.g., D0 and D1) as third conductive lines along thefirst deck 14, and associated with the first array 16; and to compriseother digit-lines (e.g., D0* and D1*) as fourth conductive lines alongthe second deck 50 and associated with the second array 52.

The conductive extensions 26 may be referred to as first conductiveextensions along the first deck 14 and extending outwardly from thethird conductive lines (e.g., D0 and D1) along the direction of they-axis (which may be referred to as a second direction), and theconductive extensions 56 may be referred to as second conductiveextensions along the second deck 50 and extending outwardly from thefourth conductive lines (e.g., D0* and D1*) along the direction of they-axis.

The interconnects 42 may be referred to as first vertical interconnectswhich couple the first conductive lines 30 to the first conductiveextensions 26, and the interconnects 74 may be referred to as secondvertical interconnects which couple the second conductive lines 70 tothe second conductive extensions 56.

Notably, each of the second conductive extensions 26 is coupled to onlyone of the conductive lines 30, and thus each conductive line 30 isuniquely coupled with one of the digit-lines of the first array 16(e.g., D0 and D1); and each of the second conductive extensions 56 iscoupled to only one of the conductive lines 70, and thus each conductiveline 70 is uniquely coupled with one of the digit-lines of the secondarray 52 (e.g., D0* and D1*).

In some embodiments, the conductive lines 30, 32, 70 and 64 along thebase 12 may be referred to as first, second, third and fourth conductivelines, respectively. The first and third conductive lines 30 and 70extend to sense-amplifier-circuitry within the circuitry 20; and thesecond and fourth conductive lines 32 and 64 extend towordline-driver-circuitry within the circuitry 20. In such embodiments,the vertical interconnects 42, 44, 68 and 74 may be referred to asfirst, second, third and fourth vertical interconnects, respectively. Inalternative embodiments, the first, second, third and fourth conductivelines may be considered to correspond to the conductive lines 32, 30, 64and 70, respectively; so that the second and fourth conductive linesextend to the sense-amplifier-circuitry, and the first and thirdconductive lines extend to the wordline-driver-circuitry. In suchembodiments, the first, second, third and fourth vertical interconnectsmay be considered to correspond to the interconnects 44, 42, 68 and 74,respectively.

In some embodiments, the conductive lines 32 of the base 12 may bereferred to as first conductive lines associated with the base, and theconductive lines 64 may be referred to as second conductive lines whichare on an opposing side of the circuitry 20 relative to the firstconductive lines 32. The first and second conductive lines 32 and 64both extend along the direction of the y-axis (which may be referred toas a first direction). The assembly 10 a may be considered to comprisesome wordlines (e.g., WL0 and WL1) as third conductive lines along thefirst deck 14, and associated with the first array 16; and to compriseother wordlines (e.g., WL4 and WL5) as fourth conductive lines along thesecond deck 50 and associated with the second array 52. The conductiveextensions 28 may be referred to as first conductive extensions alongthe first deck 14 and extending outwardly from the third conductivelines (e.g., WL0 and WL1) along the direction of the x-axis (which maybe referred to as a second direction), and the conductive extensions 60may be referred to as second conductive extensions along the second deck50 and extending outwardly from the fourth conductive lines (e.g., WL4and WL5) along the direction of the x-axis. The interconnects 44 may bereferred to as first vertical interconnects which couple the firstconductive lines 32 to the first conductive extensions 28, and theinterconnects 68 may be referred to as second vertical interconnectswhich couple the second conductive lines 64 to the second conductiveextensions 60. Notably, each of the second conductive extensions 28 iscoupled to only one of the conductive lines 32, and thus each conductiveline 32 is uniquely coupled with one of the wordlines of the first array16 (e.g., WL0 and WL1); and each of the second conductive extensions 60is coupled to only one of the conductive lines 64, and thus eachconductive line 64 is uniquely coupled with one of the wordlines of thesecond array 52 (e.g., WL4 and WL5).

The conductive lines 30, 32, 26, 28, 56, 60, 64 and 70 may all be on thesame pitch; and in the illustrated embodiment are on a pitch P₁.

In some embodiments, the circuitry 20 may be considered to comprise afirst circuitry which corresponds to either thewordline-driver-circuitry or to the sense-amplifier-circuitry, and toinclude a second circuitry which corresponds to the other of thewordline-driver-circuitry and the sense-amplifier-circuitry. In suchembodiments, the conductive lines of the base 12 which are associatedwith the first circuitry may be referred to as first and secondconductive lines, respectively. For instance, if the first circuitry isthe sense-amplifier-circuitry, then the conductive lines 30 and 70 maybe considered to be the first and second conductive lines, respectively.The wordlines/digit-lines which are coupled with the first and secondconductive lines may be referred to as third and fourth conductivelines, respectively. For instance, the digit-lines D0 and D1 may bereferred to as the third conductive lines, and the digit-lines D0* andD1*may be referred to as fourth conductive lines. The conductiveextensions coupled with the third and fourth conductive lines may bereferred to as first and second conductive extensions, respectively. Forinstance, the conductive extensions 26 and 56 may referred to as firstand second conductive extensions, respectively. The verticalinterconnects coupling the first and second conductive extensions to thefirst and second conductive lines may be referred to as first and secondvertical interconnects, respectively. For instance, the conductiveextensions 42 and 74 may be referred to as first and second verticalinterconnects.

The conductive lines associated with the base 12 and extending to thesecond circuitry may be referred to as fifth and sixth conductive lines.For instance, the conductive lines 32 and 64 may be referred to as fifthand sixth conductive lines, respectively, in embodiments in which thewordline-driver-circuitry is the second circuitry. In such embodiments,the wordlines/digit-lines which are coupled with the fifth and sixthconductive lines may be referred to as seventh and eighth conductivelines, respectively. For instance, the WL0 and WL1 may be referred to asa seventh conductive lines, and the wordlines WL4 and WL5 may bereferred to as eighth conductive lines. The conductive extensionscoupled with the seventh and eighth conductive lines may be referred toas third and fourth conductive extensions, respectively. For instance,the conductive extensions 28 and 60 may referred to as third and fourthconductive extensions, respectively. The conductive interconnectscoupling the fifth and sixth conductive lines to the third and fourthextensions may be referred to as third and fourth verticalinterconnects, respectively. For instance, the interconnects 44 and 68may be referred to as third and fourth vertical interconnects.

In some embodiments, the conductive lines 30 and 26 may be referred toas first and second conductive lines, respectively; and the conductivelines 70 and 56 may referred to as third and fourth conductive lines,respectively. In such embodiments, the vertical interconnects 42 may bereferred to as first interconnects connecting the first and secondconductive lines to one another; and the vertical interconnects 74 maybe referred to as second interconnects coupling the third and fourthconductive lines to another. The second conductive lines 26 may beconsidered to be coupled with digit-lines of the first memory array 16,and the fourth conductive lines 56 may be considered to be coupled withdigit-lines of the second memory array 52. The circuitry 20 may beconsidered to comprise sense-amplifier-circuitry which compares signalsof the digit-lines from the first memory array 16 with signals from thesecond memory array 52.

In some embodiments, the conductive lines 32 and 28 may be referred toas first and second conductive lines, respectively; and the conductivelines 64 and 60 may be referred to as third and fourth conductive lines,respectively. The vertical interconnects 44 may be referred to as firstinterconnects which couple the first conductive lines 32 with the secondconductive lines 28, and the vertical interconnects 68 may be referredto as second interconnects which couple the third conductive lines 64with the fourth conductive lines 60. The second conductive lines 28 maybe considered to be coupled with wordlines of the first memory array 16,and the fourth conductive lines 60 may be considered to be coupled withwordlines of the second memory array 52. The circuitry 20 may beconsidered to comprise wordline-driver-circuitry which drives thewordlines of the first and second memory arrays 16 and 52.

The embodiment of FIG. 5 shows the memory arrays 52 and 16 verticallystacked one atop the other. In other embodiments, the memory arrays maybe laterally adjacent one another, as shown in FIG. 6. Specifically,FIG. 6 shows an integrated assembly 10 b having the memory deck 14 overthe base deck 12. The memory deck 14 comprises the memory arrays 16 and52 laterally adjacent one another. Example digit-lines D0 and D0*, anddigit-line-extensions 26 and 56, are illustrated relative to the memoryarrays 16 and 52; with the digit-line-extensions 26 being within aconnection-bank 34, and with the digit-line-extension 56 being within aconnection-bank 58. Also, example wordlines WL0 and WL4, and thewordline-extensions 28 and 60, are illustrated relative to the memoryarrays 16 and 52; with the wordline-extensions 28 being within aconnection-bank 36, and with the wordline-extensions 60 being within aconnection-bank 62.

The digit-line-extensions 26 and 56 are coupled with conductive lines 30and 70 associated with the base 12, and such conductive lines may beconsidered to be connections to the sense amplifiers within thecircuitry 20. The wordline-extensions 28 and 60 are coupled with theconductive lines 32 and 64 associated with the base 12, and suchconductive lines may be considered to be connections to the wordlinedrivers within the circuitry 20.

FIGS. 4-6 show embodiments in which the digit-line-extensions (e.g., 26)extend orthogonally relative to the wordline-extensions (e.g., 28). Inother embodiments, it may be advantageous for the digit-line-extensionsto extend parallel relative to the wordline-extensions and to be on asame pitch as the wordline-extensions, in that such may simplifyalignment of the vertically-stacked decks.

Referring to FIG. 7, an integrated assembly 10 c is shown to comprise afirst deck 14 over a base 12. The assembly 10 c may be considered to beanalogous to the region of the assembly 10 a of FIG. 5 comprising thedeck 14 and the base 12. However, the assembly 10 c of FIG. 7 differsfrom that of FIG. 5 in that the digit-line-extensions 26 aresubstantially parallel to the wordline-extensions 28 (with the term“substantially parallel” meaning parallel to within reasonabletolerances of fabrication and measurement), rather than beingsubstantially orthogonal to the wordline-extensions. Thedigit-line-extensions 26 may be routed to the digit-lines (e.g., D0 andD1) with any suitable wiring. The digit-line-extensions 26 may be formedwith the same mask utilizing the same processing as that utilized toform the wordlines (e.g., WL0 and WL1) and the wordline-extensions 28.Accordingly, the digit-line-extensions 26 may be formed on a same pitchas the wordline-extensions 28, and may be part of a same pattern as thewordline-extensions. This may enable the same alignment to be utilizedfor aligning to the digit-line-extensions 26 as is utilized for aligningto the wordline-extensions 28.

The assembly 10 c is shown comprising the alignment marks 19 and 21described above with reference to FIG. 4. However, the alignment marksof the assembly 10 c of FIG. 7 are simpler than those of FIG. 4.Specifically, the alignment mark 19 of FIG. 7 has only a single pattern(shown as X) which is utilized to establish alignment of thedigit-line-extensions 26 and the wordline-extensions 28 along a firstaxis, and the alignment mark 21 has only a single pattern (shown as Y)to establish alignment of the digit-line-extensions 26 and thewordline-extensions 28 along a second axis orthogonal to the first axis.Accordingly, the utilization of digit-line-extensions 26 which areparallel to the wordline-extensions 28 may enable simpler alignment ofvertically-stacked decks as compared to embodiments in which thedigit-line-extensions are orthogonal to the wordline-extensions.

FIG. 8 shows an integrated assembly 10 d having memory decks 14 and 50stacked over the base 12. The assembly 10 d of FIG. 8 is analogous tothe assembly 10 a of FIG. 5, but comprises the digit-line-extensions 26and 56 extending substantially parallel to the wordline-extensions 28and 60. Accordingly, the assembly 10 d of FIG. 8 may benefit from thesimplified alignment described above with reference to FIG. 7. It isnoted that another difference between the assembly 10 d of FIG. 8 andthe assembly 10 a of FIG. 5 is that the conductive lines 30, 32, 64 and70 associated with the base 12 of the assembly 10 d of FIG. 8 are allparallel to one another. In contrast, the conductive lines 30 and 70 ofthe assembly 10 a FIG. 5 extend along the x-axis, while the conductivelines 32 and 64 extend along the y-axis (i.e., are substantiallyorthogonal to the conductive lines 30 and 70).

FIGS. 9 and 10 are provided to further describe the difference betweenutilization of digit-line-extensions extending substantially orthogonalto the wordline-extensions, and the utilization of digit-line-extensionsextending substantially parallel to the wordline-extensions.

Referring to FIG. 9, such diagrammatically shows a region of theconfiguration 10 a of FIG. 5; and specifically shows a portion of thedeck 14 (in solid lines) over a portion of the base 12 (in dashedlines). The digit-line-extensions 26 are shown coupled with digit-lines(e.g., D0 and D1) which extend into the memory array 16, and thewordline-extensions 28 are shown coupled with wordlines (WL1 and WL2)which extend into the memory array. The digit-line-extensions 26 arecoupled with conductive lines 30 through the vertical interconnects 42,and the wordline-extensions 28 are coupled with conductive lines 32through the vertical interconnects 44. The conductive lines 30 are alongthe base 12, and are coupled with sense amplifiers within the circuitry20; and the conductive lines 32 extend along the base 12 and are coupledwith wordline drivers within the circuitry 20.

The digit-line-extensions 26 are substantially orthogonal to thewordline-extensions 28, and are also substantially orthogonal to theunderlying conductive lines 30. The wordline-extensions 28 aresubstantially orthogonal to the underlying conductive lines 32.

The alignment of the deck 14 relative to the base 12 comprisescomparison of the decks along the x and y directions (i.e., along thex-axis direction and the y-axis direction of the illustrated axissystem).

The digit-line-extensions 26 are aligned with the conductive lines 30 ina manner which compensates for misalignment utilizing X and Y patternswithin alignment marks associated with the deck 14 and the base 12. Oneof the X and Y patterns is on the deck 14, and the other is on the base12. The alignment utilizing the X and Y patterns is illustrated in FIG.9 with a box 76.

The wordline-extensions 28 are aligned with the conductive lines 32utilizing X′ and Y′ patterns within the alignment marks associated withthe deck 14 and the base 12. One of the X′ and Y′ patterns is on thedeck 14, and the other is on the base 12. The alignment utilizing the X′and Y′ patterns is illustrated in FIG. 9 with a box 78.

FIG. 10 diagrammatically shows a region of the configuration 10 d ofFIG. 8; and specifically shows a portion of the deck 14 (in solid lines)over a portion of the base 12 (in dashed lines). Thedigit-line-extensions 26 are shown coupled with digit-lines (e.g., D0and D1) which extend into the memory array 16, and thewordline-extensions 28 are shown coupled with wordlines (WL1 and WL2)that extend into the memory array. The digit-line-extensions 26 arecoupled with conductive lines 30 through the vertical interconnects 42,and the wordline-extensions 28 are coupled with conductive lines 32through the vertical interconnects 44. The conductive lines 30 are alongthe base 12, and are coupled with sense amplifiers within the circuitry20; and the conductive lines 32 extend along the base 12 and are coupledwith wordline drivers within the circuitry 20.

The digit-line-extensions 26 are substantially parallel to thewordline-extensions 28, and are part of the same pattern utilized toform the wordline-extensions. The digit-line-extensions 26 and thewordline-extensions 28 are substantially orthogonal to the underlyingconductive lines 30 and 32. The conductive lines 30 and 32 may be partof the same pattern as one another, and are formed along the base 12.

The alignment of the deck 14 relative to the base 12 comprisescomparison of the decks along the x and y directions (i.e., along thex-axis direction and the y-axis direction of the illustrated axissystem), but only requires the X and Y patterns (shown with the box 76)since only one pattern from deck 14 (the pattern having thewordline-extensions 28 as well as the digit-line-extensions 26) is beingaligned with one pattern from base 12 (the pattern having conductivelines 30 and 32). Thus, the alignment of the decks of assembly 10 d ofFIG. 10 may be simpler than the alignment of the decks of assembly 10 aof FIG. 9.

The vertical interconnects 42, 44, 68 and 74 of FIGS. 4-9 may compriseany suitable configurations. FIG. 11 shows an example configuration of avertical interconnect. Specifically, FIG. 11 illustrates a region of theconfiguration 10 a of FIG. 5; and specifically shows a portion of thedeck 14 stacked over a portion of the base 12. A conductive line 30 isshown along the base 12, and is shown to be supported by an underlyingsubstrate 80. The substrate 80 has insulative material 82 directly underthe conductive line 30, and has a semiconductor substrate 84 supportingthe insulative material 82. The digit-line-extensions 26 are shown alongthe memory deck 14, and are shown to be supported by an underlyingsubstrate 86. The substrate 86 has insulative material 88 directly underthe digit-line-extensions, and has a semiconductor substrate 90supporting the insulative material 88.

The vertically-extending interconnect 42 comprises conductive materialthat directly contacts one of the digit-line-extensions 26, and theconductive material 30. In the shown embodiment, thevertically-extending interconnect 42 passes through the conductive line30 to optionally connect with conductive components at a level below thebase 12, and passes through the extension 26 to optionally connect withconductive components at a level above the memory deck 14. In otherembodiments, the vertically-extending interconnect 42 may terminatealong the conductive line 30 and/or along the extension 26, rather thanoptionally extending past the conductive line 30 and/or the extension26.

The conductive materials of extension 26, line 30 and interconnect 42may comprise any suitable composition(s); such as, for example, one ormore of various metals (e.g., titanium, tungsten, cobalt, ruthenium,nickel, platinum, etc.), metal-containing compositions (e.g., metalsilicide, metal nitride, metal carbide, etc.), and/or conductively-dopedsemiconductor materials (e.g., conductively-doped silicon,conductively-doped germanium, etc.). The insulative materials 82 and 88may comprise any suitable composition(s); including, for example, one orboth of silicon dioxide and silicon nitride.

The assemblies and structures discussed above may be utilized withinintegrated circuits (with the term “integrated circuit” meaning anelectronic circuit supported by a semiconductor substrate); and may beincorporated into electronic systems. Such electronic systems may beused in, for example, memory modules, device drivers, power modules,communication modems, processor modules, and application-specificmodules, and may include multilayer, multichip modules. The electronicsystems may be any of a broad range of systems, such as, for example,cameras, wireless devices, displays, chip sets, set top boxes, games,lighting, vehicles, clocks, televisions, cell phones, personalcomputers, automobiles, industrial control systems, aircraft, etc.

Unless specified otherwise, the various materials, substances,compositions, etc. described herein may be formed with any suitablemethodologies, either now known or yet to be developed, including, forexample, atomic layer deposition (ALD), chemical vapor deposition (CVD),physical vapor deposition (PVD), etc.

The terms “dielectric” and “insulative” may be utilized to describematerials having insulative electrical properties. The terms areconsidered synonymous in this disclosure. The utilization of the term“dielectric” in some instances, and the term “insulative” (or“electrically insulative”) in other instances, may be to providelanguage variation within this disclosure to simplify antecedent basiswithin the claims that follow, and is not utilized to indicate anysignificant chemical or electrical differences.

The particular orientation of the various embodiments in the drawings isfor illustrative purposes only, and the embodiments may be rotatedrelative to the shown orientations in some applications. Thedescriptions provided herein, and the claims that follow, pertain to anystructures that have the described relationships between variousfeatures, regardless of whether the structures are in the particularorientation of the drawings, or are rotated relative to suchorientation.

The cross-sectional views of the accompanying illustrations only showfeatures within the planes of the cross-sections, and do not showmaterials behind the planes of the cross-sections, unless indicatedotherwise, in order to simplify the drawings.

When a structure is referred to above as being “on”, “adjacent” or“against” another structure, it can be directly on the other structureor intervening structures may also be present. In contrast, when astructure is referred to as being “directly on”, “directly adjacent” or“directly against” another structure, there are no interveningstructures present. The terms “directly under”, “directly over”, etc.,do not indicate direct physical contact (unless expressly statedotherwise), but instead indicate upright alignment.

Structures (e.g., layers, materials, etc.) may be referred to as“extending vertically” to indicate that the structures generally extendupwardly from an underlying base (e.g., substrate). Thevertically-extending structures may extend substantially orthogonallyrelative to an upper surface of the base, or not.

Some embodiments include an integrated assembly having a base supportingfirst circuitry and first conductive lines. The first conductive linesextend along a first direction and are associated with the firstcircuitry. A deck is over the base and supports an array of memory cellsand second conductive lines which are associated with the array ofmemory cells. The second conductive lines extend along a seconddirection which is substantially orthogonal to the first direction.Vertical interconnects extend from the deck to the base and couple thefirst conductive lines to the second conductive lines. Each of thevertical interconnects couples one of the first conductive lines to oneof the second conductive lines. Each of the second conductive lines iscoupled with only one of the first conductive lines.

Some embodiments include an integrated assembly which includes a basecomprising wordline-driver-circuitry and sense-amplifier-circuitry.First conductive lines are associated with the base and extend to thesense-amplifier-circuitry. Second conductive lines are associated withthe base and extend to the wordline-driver-circuitry. A deck is over thebase and comprises an array of memory cells. Digit-lines are supportedby the deck and are associated with the array of memory cells. Each ofthe digit-lines has an extension which crosses over the first conductivelines and which is orthogonal to the first conductive lines. Wordlinesare supported by the deck and are associated with the array of memorycells. Each of the wordlines has an extension which crosses over thesecond conductive lines and which is orthogonal to the second conductivelines. First vertical interconnects extend from the deck to the base andcouple the first conductive lines to the digit-line-extensions. Each ofthe first vertical interconnects couples one of the first conductivelines to one of the digit-line-extensions. Each of the first conductivelines is coupled with only one of the digit-line-extensions. Secondvertical interconnects extend from the deck to the base and couple thesecond conductive lines to the wordline-extensions. Each of the secondvertical interconnects couples one of the second conductive lines to oneof the wordline-extensions. Each of the second conductive lines iscoupled with only one of the wordline-extensions.

Some embodiments include an integrated assembly having a base comprisingfirst circuitry. First and second conductive lines are associated withthe base and extend to the first circuitry. The second conductive linesare on an opposing side of the first circuitry relative to the firstconductive lines. The first and second conductive lines extend along afirst direction. A first deck is over the base and comprises a firstarray of first memory cells. A second deck over the first deck andcomprises a second array of second memory cells. Third conductive linesare along the first deck and are associated with the first array. Fourthconductive lines are along the second deck and are associated with thesecond array. First conductive extensions are along the first deck andextend outwardly from the third conductive lines along a seconddirection which crosses the first direction. Second conductiveextensions are along the second deck and extend outwardly from thefourth conductive lines along the second direction. First verticalinterconnects extend from the first deck to the base and couple thefirst conductive lines to the first conductive extensions. Each of thefirst vertical interconnects couples one of the first conductive linesto one of the first conductive extensions. Each of the first conductivelines is coupled with only one of the first conductive extensions.Second vertical interconnects extend from the second deck to the baseand couple the second conductive lines to the second conductiveextensions. Each of the second vertical interconnects couples one of thesecond conductive lines to one of the second conductive extensions. Eachof the second conductive lines is coupled with only one of the secondconductive extensions.

In compliance with the statute, the subject matter disclosed herein hasbeen described in language more or less specific as to structural andmethodical features. It is to be understood, however, that the claimsare not limited to the specific features shown and described, since themeans herein disclosed comprise example embodiments. The claims are thusto be afforded full scope as literally worded, and to be appropriatelyinterpreted in accordance with the doctrine of equivalents.

1-26. (canceled)
 27. An integrated assembly, comprising: a basesupporting first and second conductive lines that extend parallel toeach other in a first direction; a deck over the base and comprising anarray of memory cells; third and fourth conductive lines supported bythe deck and extend parallel to each other in a second directiondifferent from the first direction; and first and second verticalinterconnects extending from the deck to the base, the first verticalinterconnects coupling the first conductive lines to the thirdconductive lines and the second vertical interconnects coupling thesecond conductive lines to the fourth conductive lines; each of thefirst and second vertical interconnects coupling only one conductiveline of the base to only one conductive line of the deck.
 28. Theintegrated assembly of claim 27 wherein the first conductive linescomprise connections with sense amplifiers supported on the base. 29.The integrated assembly of claim 27 wherein the second conductive linescomprise connections with wordline drivers supported on the base. 30.The integrated assembly of claim 27 wherein the first direction isperpendicular to the second direction.
 31. The integrated assembly ofclaim 27 wherein the third conductive lines comprise digit lineextensions.
 32. The integrated assembly of claim 31 wherein the array ofmemory cells comprise digit lines supported on the deck and connectedwith the digit line extensions, the digit lines extend perpendicular tothe digit lines extensions in the same plane.
 33. The integratedassembly of claim 27 wherein the fourth conductive lines comprisewordline extensions.
 34. The integrated assembly of claim 33 wherein thearray of memory cells comprise wordlines supported on the deck andextend collinearly with the wordline extensions.
 35. The integratedassembly of claim 27 wherein the deck comprises a first deck and thearray of memory cells comprises a first array of a first memory cells,and wherein the base supports fifth and sixth conductive lines thatextend parallel to the first and second conductive lines, and furthercomprising: a second deck over the first deck and comprising a secondarray of second memory cells; seventh and eight conductive linessupported by the second deck; and third and fourth verticalinterconnects extending from the second deck to the base, the thirdvertical interconnects coupling the fifth conductive lines to theseventh conductive lines and the second vertical interconnects couplingthe sixth conductive lines to the eight conductive lines; each of thethird and fourth vertical interconnects coupling only one conductiveline of the base to only one conductive line of the second deck.
 36. Theintegrated assembly of claim 35 wherein the seventh and eight conductivelines supported by the second deck are parallel to each other.
 37. Theintegrated assembly of claim 35 wherein the seventh and eight conductivelines supported by the second deck extend in the same direction as thethird and fourth conductive lines supported by the first deck.
 38. Anintegrated assembly, comprising: a base supporting first and secondconductive lines that are on a same pitch as one another; a deck overthe base and comprising an array of memory cells; third and fourthconductive lines supported by the deck and extend parallel to eachother; and first and second vertical interconnects extending from thedeck to the base, the first vertical interconnects coupling the firstconductive lines to the third conductive lines and the second verticalinterconnects coupling the second conductive lines to the fourthconductive lines; each of the first and second vertical interconnectscoupling only one conductive line of the base to only one conductiveline of the deck.
 39. The integrated assembly of claim 38 wherein thefirst conductive lines comprise connections with sense amplifierssupported on the base.
 40. The integrated assembly of claim 38 whereinthe second conductive lines comprise connections with wordline driverssupported on the base.
 41. The integrated assembly of claim 38 whereinthe first direction is perpendicular to the second direction.
 42. Theintegrated assembly of claim 38 wherein the third conductive linescomprise digit line extensions.
 43. The integrated assembly of claim 38wherein the third and fourth conductive lines are on a same pitch as oneanother.
 44. The integrated assembly of claim 38 wherein the deckcomprises a first deck and the array of memory cells comprises a firstarray of a first memory cells, and wherein the base supports fifth andsixth conductive lines that extend parallel to the first and secondconductive lines, and further comprising: a second deck over the firstdeck and comprising a second array of second memory cells; seventh andeight conductive lines supported by the second deck; and third andfourth vertical interconnects extending from the second deck to thebase, the third vertical interconnects coupling the fifth conductivelines to the seventh conductive lines and the second verticalinterconnects coupling the sixth conductive lines to the eightconductive lines; each of the third and fourth vertical interconnectscoupling only one conductive line of the base to only one conductiveline of the second deck.
 45. The integrated assembly of claim 44 whereinthe seventh and eight conductive lines are on a same pitch as oneanother.
 46. The integrated assembly of claim 44 wherein the fifth andsixth conductive lines are on a same pitch as one another.